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| RB557W Diodes Schottky barrier diode RB557W Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.60.2 0.5 0.5 0.150.05 Features 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability 0.20.1 -0.05 (2) 0.30.1 0.05 (3) 0.7 1.60.2 0.80.1 00.1 0.1Min 0.7 0.7 (1) 0.550.1 0.70.1 0.6 EMD3 0.6 Construction Silicon epitaxial planar 0.5 0.5 1.00.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.550.1 0 1.750.1 0.30.1 3.50.05 1.80.2 5.50.2 1.80.1 0.50.1 00.1 8.00.2 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA (*1) Rating of per diode Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. - Max. 0.35 0.49 10 Unit V V A Conditions IF=10mA IF=100mA VR=10V 1.3 1/3 RB557W Diodes Electrical characteristic curves 1000 FORWARD CURRENT:IF(mA) 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS Ta=125 REVERSE CURRENT:IR(uA) Ta=75 10000 1000 Ta=75 100 10 1 Ta=-25 0.1 0.01 0 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 100 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MH Ta=-25 Ta=25 10 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 300 FORWARD VOLTAGE:VF(mV) Ta=25 IF=10mA n=30pcs 30 25 20 15 10 5 0 AVE:2.017uA Ta=25 VR=10V n=30pcs 20 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 18 17 16 15 14 13 12 11 10 AVE:17.34pF Ta=25 f=1MHz VR=0V n=10pcs 280 270 260 AVE:270.2mV 250 VF DISPERSION MAP REVERSE CURRENT:IR(uA) 290 IR DISPERSION MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 8.3ms 10 AVE:3.90A 5 1cyc 10 Ifsm 8.3ms 8.3ms 1cyc 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ifsm t 5 0 0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 0.1 Rth(j-a) 0.08 Per diode 0.1 Per diode 0.08 REVERSE POWER DISSIPATION:PR (W) D=1/2 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA time FORWARD POWER DISSIPATION:Pf(W) 0.06 Sin(180) 0.04 0.02 0 0.06 D=1/2 DC Sin(180) DC 0.04 10 1ms 0.02 300us 1 0.001 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 2/3 RB557W Diodes 0.3 Per diode AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t 0.2 DC D=1/2 0.1 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 T Io VR D=t/T VR=15V Tj=125 0.3 Per diode 0A 0V t T D=1/2 0.1 Sin(180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) Io VR D=t/T VR=15V Tj=125 0.2 DC 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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